Small- and large-signal measurements of low-temperature GaAs fets

被引：0
|
作者：
Boudart, B
Gaquiere, C
Trassaert, S
Theron, D
Splingart, B
Lipka, M
Kohn, E
机构：
[1] Institut d'Electronique et de Microélectronique du Nord, U.M.R.-C.N.R.S. 9929, Département Hyperfréquences et Semiconducteurs, 59652 Villeneuve D'Ascq Cedex, Avenue Poincaré
[2] Universität Ulm, Department of Electron Devices and Circuits, 86069 Ulm
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1996年 / 12卷 / 02期
关键词：
low-temperature GaAs; power FET; pulse; microwave measurements; electrical passivation;
D O I：
10.1002/(SICI)1098-2760(19960605)12:2<57::AID-MOP2>3.0.CO;2-M
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-temperature (LT) GaAs FETs have been realized for high I x V products. They have been extensively characterized under dc, rf pulsed, and large-signal conditions. The results are analyzed and related to the device structure. The electrical passivant role of the LT GaAs has been demonstrated. Under de conditions I x V products of 2.5 W/mm are obtained. Under microwave frequencies, only 0.4 W/mm were measured on this device. We discuss the relationship between the dielectric relaxation of LT GaAs and the low-power performance of the device. New device structures are proposed. (C) 1996 John Wiley & Sons, Inc.
引用
收藏
页码：57 / 59
页数：3
相关论文
共 50 条
  • [41] Small- and Large-Signal Dynamic Output Capacitance and Energy Loss in GaN-on-Si Power HEMTs
    Zhuang, Jia
    Zulauf, Grayson
    Roig-Guitart, Jaume
    Plummer, James
    Rivas, Juan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (04) : 1819 - 1826
  • [42] Influence of unit subcell selection on small- and large-signal performance of SiGe power HBTs - (Student paper)
    Park, Jonghoo
    Jiang, Ningyue
    Ma, Zhenqiang
    2007 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2007, : 64 - +
  • [43] Multisine calibration for large-signal broadband measurements
    Van Moer, Wendy
    Rolain, Yves
    IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 2008, 57 (07) : 1478 - 1483
  • [44] Elimination of charge-enhancement effects in GaAs FETs with a low-temperature grown GaAs buffer layer
    McMorrow, D
    Weatherford, TR
    Curtice, WR
    Knudson, AR
    Buchner, S
    Melinger, JS
    Tran, LH
    Campbell, AB
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1995, 42 (06) : 1837 - 1843
  • [45] SMALL ELECTROMAGNET FOR LOW-TEMPERATURE MAGNETIC MEASUREMENTS
    LEINHARDT, TE
    REYNOLDS, JM
    PHYSICAL REVIEW, 1955, 99 (05): : 1626 - 1627
  • [46] A LARGE-SIGNAL, ANALYTIC MODEL FOR THE GAAS-MESFET
    KHATIBZADEH, MA
    TREW, RJ
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (02) : 231 - 238
  • [47] TECHNIQUE FOR PREDICTING LARGE-SIGNAL PERFORMANCE OF A GAAS MESFET
    WILLING, HA
    RAUSCHER, C
    DESANTIS, P
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1978, 26 (12) : 1017 - 1023
  • [48] Scalable GaInP/GaAs HBT large-signal model
    Rudolph, M
    Doerner, R
    Beilenhoff, K
    Heymann, P
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2000, 48 (12) : 2370 - 2376
  • [49] Efficient construction of a large-signal behavioural HEMT model from automated vectorial large-signal measurements
    Schreurs, D
    Vandenberghe, S
    Vandersmissen, R
    EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2001, : 217 - 221
  • [50] LARGE-SIGNAL MODULATION OF GaAs LASER DIODES.
    Schicketanz, Dieter
    Siemens Forschungs- und Entwicklungsberichte/Siemens Research and Development Reports, 1975, 4 (06): : 325 - 330
12345