Small- and large-signal measurements of low-temperature GaAs fets

被引：0
|
作者：
Boudart, B
Gaquiere, C
Trassaert, S
Theron, D
Splingart, B
Lipka, M
Kohn, E
机构：
[1] Institut d'Electronique et de Microélectronique du Nord, U.M.R.-C.N.R.S. 9929, Département Hyperfréquences et Semiconducteurs, 59652 Villeneuve D'Ascq Cedex, Avenue Poincaré
[2] Universität Ulm, Department of Electron Devices and Circuits, 86069 Ulm
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1996年 / 12卷 / 02期
关键词：
low-temperature GaAs; power FET; pulse; microwave measurements; electrical passivation;
D O I：
10.1002/(SICI)1098-2760(19960605)12:2<57::AID-MOP2>3.0.CO;2-M
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-temperature (LT) GaAs FETs have been realized for high I x V products. They have been extensively characterized under dc, rf pulsed, and large-signal conditions. The results are analyzed and related to the device structure. The electrical passivant role of the LT GaAs has been demonstrated. Under de conditions I x V products of 2.5 W/mm are obtained. Under microwave frequencies, only 0.4 W/mm were measured on this device. We discuss the relationship between the dielectric relaxation of LT GaAs and the low-power performance of the device. New device structures are proposed. (C) 1996 John Wiley & Sons, Inc.
引用
收藏
页码：57 / 59
页数：3
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