Modeling the effect of stochastic heating and surface chemistry in a pure CF4 inductively coupled plasma

被引:4
|
作者
Levko, Dmitry [1 ]
Shukla, Chandrasekhar [1 ]
Raja, Laxminarayan L. [2 ]
机构
[1] Esgee Technologies Inc, Austin, TX 78746 USA
[2] Univ Texas Austin, Dept Aerosp Engn & Engn Mech, Austin, TX 78712 USA
来源
关键词
TRANSPORT; KINETICS; PROBE;
D O I
10.1116/6.0001293
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The physics and chemistry of inductively coupled plasma generated in pure tetrafluoromethane are analyzed using a self-consistent two-dimensional plasma fluid model coupled with Maxwell's equations. The model also takes into account the stochastic electron heating typical for low-pressure inductive discharges. We show that this effect is important for the explanation of experimentally measured plasma parameters. We also analyze the influence of several model parameters on the plasma. These parameters include the mechanism of surface reactions, the sticking coefficient of fluorine atoms at the walls, the uncertainty in the electron impact dissociation reactions, and the background gas pressure.
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收藏
页数:11
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