Modeling the effect of stochastic heating and surface chemistry in a pure CF4 inductively coupled plasma

被引:4
|
作者
Levko, Dmitry [1 ]
Shukla, Chandrasekhar [1 ]
Raja, Laxminarayan L. [2 ]
机构
[1] Esgee Technologies Inc, Austin, TX 78746 USA
[2] Univ Texas Austin, Dept Aerosp Engn & Engn Mech, Austin, TX 78712 USA
来源
关键词
TRANSPORT; KINETICS; PROBE;
D O I
10.1116/6.0001293
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The physics and chemistry of inductively coupled plasma generated in pure tetrafluoromethane are analyzed using a self-consistent two-dimensional plasma fluid model coupled with Maxwell's equations. The model also takes into account the stochastic electron heating typical for low-pressure inductive discharges. We show that this effect is important for the explanation of experimentally measured plasma parameters. We also analyze the influence of several model parameters on the plasma. These parameters include the mechanism of surface reactions, the sticking coefficient of fluorine atoms at the walls, the uncertainty in the electron impact dissociation reactions, and the background gas pressure.
引用
收藏
页数:11
相关论文
共 50 条
  • [1] The effect of CF4 addition on Ru etching with inductively coupled plasma
    Lim, KT
    Kim, DP
    Kim, KT
    Kim, CI
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S829 - S832
  • [2] Diagnostics of an inductively coupled CF4/Ar plasma
    Hioki, K
    Hirata, H
    Matsumura, S
    Petrovic, ZL
    Makabe, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2000, 18 (03): : 864 - 872
  • [3] CF4 decomposition using inductively coupled plasma:: Effect of power frequency
    Kuroki, T
    Mine, J
    Okubo, M
    Yamamoto, T
    Saeki, N
    IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2005, 41 (01) : 215 - 220
  • [4] Radical kinetics in an inductively-coupled plasma in CF4
    Booth, JP
    Abada, H
    Chabert, P
    Graves, DB
    PHYSICS OF IONIZED GASES, 2004, 740 : 252 - 267
  • [5] Mode transition in CF4 + Ar inductively coupled plasma
    Liu, Wei
    Gao, Fei
    Zhao, Shu-Xia
    Li, Xue-Chun
    Wang, You-Nian
    PHYSICS OF PLASMAS, 2013, 20 (12)
  • [6] Characteristics of CFx radicals and plasma parameters in an inductively coupled CF4 plasma
    Kim, JH
    Chung, KH
    Yoo, YS
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 47 (02) : 249 - 255
  • [7] Dry Etching of Germanium by Using Inductively Coupled CF4 Plasma
    Kim, T. S.
    Yang, H. Y.
    Kil, Y. H.
    Jeong, T. S.
    Kang, S.
    Shim, K. H.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 54 (06) : 2290 - 2296
  • [8] Nanoscale dry etching of germanium by using inductively coupled CF4 plasma
    Kyu-Hwan Shim
    Ha Yong Yang
    Yeon-Ho Kil
    Hyeon Deok Yang
    Jong-Han Yang
    Woong-Ki Hong
    Sukill Kang
    Tae Soo Jeong
    Taek Sung Kim
    Electronic Materials Letters, 2012, 8 : 423 - 428
  • [9] Change of hydrophobicity on silicone rubber modified by CF4 capacitively coupled plasma and inductively coupled plasma
    Gao, S. H.
    Liu, Y.
    Lei, M. K.
    Wen, L. S.
    SURFACE ENGINEERING (ICSE 2007), 2008, 373-374 : 350 - 353
  • [10] Detection of chamber conditioning by CF4 plasmas in an inductively coupled plasma reactor
    Cruden, BA
    Rao, MVVS
    Sharma, SP
    Meyyappan, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (01): : 353 - 363