Low frequency noise in La0.7Sr0.3MnO3 thin films :: effects of substrate materials and contact resistance

被引：0
|
作者：
Routoure, J. -M. [1 ]
Mechin, L. [1 ]
Fadil, D. [1 ]
Barone, C. [1 ]
Mercone, S. [1 ]
Perna, P. [1 ]
Flament, S. [1 ]
机构：
[1] Univ Caen, ENSICAEN, CNRS, GREYC,UMR 6072, 6 Bd Marechal Juin, F-14050 Caen, France
来源：
NOISE AND FLUCTUATIONS | 2007年 / 922卷
关键词：
low noise; DC current source; four probe technique;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report low frequency noise measurements performed in patterned La0.7Sr0.3MnO3 (LSMO) thin films of various thicknesses (20 nm up to 200 mn) deposited onto SrTiO3(STO) or buffered Silicon substrates. From an application point of view, the latter is very important because it demonstrates the possibility to integrate LSMO sensors or devices with standard industrial microelectronic circuits. The noise level in LSMO on buffered Si substrate is about 2 orders of magnitude higher than on STO substrates. Contact noise is also given.
引用
收藏
页码：229 / +
页数：2
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