low noise;
DC current source;
four probe technique;
D O I:
暂无
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
We report low frequency noise measurements performed in patterned La0.7Sr0.3MnO3 (LSMO) thin films of various thicknesses (20 nm up to 200 mn) deposited onto SrTiO3(STO) or buffered Silicon substrates. From an application point of view, the latter is very important because it demonstrates the possibility to integrate LSMO sensors or devices with standard industrial microelectronic circuits. The noise level in LSMO on buffered Si substrate is about 2 orders of magnitude higher than on STO substrates. Contact noise is also given.