Optimization of 1.3 μm metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy

被引：14
|
作者：
Tångring, I [1 ]
Wang, SM [1 ]
Sadeghi, M [1 ]
Gu, QF [1 ]
Larsson, A [1 ]
机构：
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
来源：
JOURNAL OF CRYSTAL GROWTH | 2005年 / 281卷 / 2-4期
关键词：
metamorphic growth; molecular beam epitaxy; semiconducting III-V materials;
D O I：
10.1016/j.jcrysgro.2005.04.019
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We investigate surface, structural and optical properties of 1.3 mu m metamorphic InGaAs quantum wells (QWs) on GaAs substrates grown by molecular beam epitaxy. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical quality. The optimized structure has an average surface roughness of 1.6 nm. Photoluminescence intensity at room temperature is stronger than that of high-quality GaInNAs QW-material, and comparable to that of high quality InGaAs QWs and InAs quantum dots at similar wavelengths, while the minimum line width is 32 meV, indicating that the metamorphic InGaAs QWs are very promising for 1.3 mu m laser applications. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：220 / 226
页数：7
相关论文
共 50 条
  • [41] Long wavelength (1.3 and 1.5 μm) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs
    Dowd, P
    Braun, W
    Smith, DJ
    Ryu, CM
    Guo, CZ
    Chen, SL
    Koelle, U
    Johnson, SR
    Zhang, YH
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (09) : 1267 - 1269
  • [42] 1.3 MU-M EXCITON RESONANCES IN INGAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY USING A SLOWLY GRADED BUFFER LAYER
    LORD, SM
    PEZESHKI, B
    KIM, SD
    HARRIS, JS
    [J]. JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 759 - 764
  • [43] Anisotropic surface segregation of indium atoms in molecular beam epitaxy of InGaAs/GaAs quantum wells
    Yamaguchi, K
    Yasuda, Y
    Kovács, A
    Barna, PB
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (01) : 217 - 220
  • [44] Interface optimization of AlInP/GaAs multiple quantum wells-grown by gas source molecular beam epitaxy
    Kuo, JM
    Kuo, HC
    Cheng, JY
    Wang, YC
    Lu, Y
    Mayo, WE
    [J]. JOURNAL OF CRYSTAL GROWTH, 1996, 158 (04) : 393 - 398
  • [45] HgCdTe quantum wells grown by molecular beam epitaxy
    Dvoretsky, S. A.
    Ikusov, D. G.
    Kvon, Z. D.
    Mikhailov, N. N.
    Remesnik, V. G.
    Smirnov, R. N.
    Sidorov, Yu. G.
    Shvets, V. A.
    [J]. SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2007, 10 (04) : 47 - 53
  • [46] Photoluminescence and photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular-beam epitaxy
    Mozume, T
    Kasai, J
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (03) : 1050 - 1055
  • [47] Aluminium incorporation for growth optimization of 1.3 μm emission InAs/GaAs quantum dots by molecular beam epitaxy
    Wei, YQ
    Wang, SM
    Ferdos, F
    Vukusic, J
    Zhao, QX
    Sadeghi, M
    Larsson, A
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 172 - 176
  • [48] GROWTH BY MOLECULAR-BEAM EPITAXY AND PHOTOLUMINESCENCE OF INGAAS/GAAS QUANTUM-WELLS ON GAAS (111)A SUBSTRATES
    VACCARO, PO
    TAKAHASHI, M
    FUJITA, K
    WATANABE, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) : 8037 - 8041
  • [49] High Characteristic Temperature 1.3 μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy
    Ji Hai-Ming
    Yang Tao
    Cao Yu-Lian
    Xu Peng-Fei
    Gu Yong-Xian
    Ma Wen-Quan
    Wang Zhan-Guo
    [J]. CHINESE PHYSICS LETTERS, 2010, 27 (02)
  • [50] Ultrathin InAs/GaAs single quantum wells grown on GaAs (111)A substrates by molecular beam epitaxy
    Mashita, M
    Numata, T
    Koo, BH
    Makino, H
    Yao, T
    [J]. IEE PROCEEDINGS-OPTOELECTRONICS, 2003, 150 (04): : 399 - 402
12345