Interface optimization of AlInP/GaAs multiple quantum wells-grown by gas source molecular beam epitaxy

We present a source switching procedure for the growth of abrupt interfaces in AIInP/GaAs multiple quantum well heterostructures grown by gas source molecular beam epitaxy. The switching procedures were optimized through characterization by cathodoluminescence, room temperature absorption, double crystal X-ray diffraction and dynamic Simulation, and high resolution transmission electron microscopy. Atomically flat AIInP-on-GaAs and GaAs-on-AIInP interfaces were obtained by avoiding exposure of the GaAs surface to phosphorous before the growth of AIInP and by optimizing the pump-out intervals of the residual A(2) and P-2 between layers. The optimum pump-out interval was determined to be 20 s for As-2, and 10 s for P-2.