Electron beam induced patterns in Ag/GeS4

被引：0
|
作者：
Romero, JS [1 ]
Fitzgerald, AG [1 ]
Mietzsch, K [1 ]
机构：
[1] Univ Dundee, Carnegie Lab Phys, Dept Elect Engn & Phys, Dundee DD1 4HN, Scotland
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2001年 / 3卷 / 03期
关键词：
Ag/GeS4; electron beam irradiation; silver dissolution and diffusion;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The results of a systematic study of the formation of patterns by an electron beam in GeS4 are reported, A scanned electron beam has been shown to induce the dissolution of silver into the chalcogenide matrix in the irradiated areas. The dissolution produces an expansion of the material in the irradiated region that is believed to be due to the fact that the density of the reaction product is less than the average density of the silver and chalcogenide layers [11]. Once the chemical reaction was completed, no further migration of silver towards the irradiated area was observed in the Ag/GeS4 thin films.
引用
收藏
页码：649 / 654
页数：6
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