In-situ synchrotron x-ray studies of the microstructure and stability of In2O3 epitaxial films

被引：8

作者：

Highland, M. J. ^{[1
]}

Hruszkewycz, S. O. ^{[1
]}

Fong, D. D. ^{[1
]}

Thompson, Carol ^{[2
]}

Fuoss, P. H. ^{[1
]}

Calvo-Almazan, I. ^{[1
]}

Maddali, S. ^{[1
]}

Ulvestad, A. ^{[1
]}

Nazaretski, E. ^{[3
]}

Huang, X. ^{[3
]}

Yan, H. ^{[3
]}

Chu, Y. S. ^{[3
]}

Zhou, H. ^{[4
]}

Baldo, P. M. ^{[1
]}

Eastman, J. A. ^{[1
]}

机构：

[1] Argonne Natl Lab, Mat Sci Div, Argonne, IL 60439 USA

[2] Northern Illinois Univ, Dept Phys, De Kalb, IL 60115 USA

[3] Brookhaven Natl Lab, Natl Synchrotron Light Source 2, Upton, NY 11973 USA

[4] Argonne Natl Lab, Xray Sci Div, Argonne, IL 60439 USA

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 16期

关键词：

GROWTH;

D O I：

10.1063/1.4997773

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the synthesis, stability, and local structure of In2O3 thin films grown via rf-magnetron sputtering and characterized by in-situ x-ray scattering and focused x-ray nanodiffraction. We find that In2O3 deposited onto (0 0 1)-oriented single crystal yttria-stabilized zirconia substrates adopts a Stranski-Krastanov growth mode at a temperature of 850 degrees C, resulting in epitaxial, truncated square pyramids with (1 1 1) side walls. We find that at this temperature, the pyramids evaporate unless they are stabilized by a low flux of In2O3 from the magnetron source. We also find that the internal lattice structure of one such pyramid is made up of differently strained volumes, revealing local structural heterogeneity that may impact the properties of In2O3 nanostructures and films. Published by AIP Publishing.

引用

页数：5

共 50 条

[21] In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs
Reentila, O.
Lankinen, A.
Mattila, M.
Saynatjoki, A.
Tuomi, T. O.
Lipsanen, H.
O'Reilly, L.
McNally, P. J.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2008, 19 (02) : 137 - 142
[22] In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs
O. Reentilä
A. Lankinen
M. Mattila
A. Säynätjoki
T. O. Tuomi
H. Lipsanen
L. O’Reilly
P. J. McNally
Journal of Materials Science: Materials in Electronics, 2008, 19 : 137 - 142
[23] In-situ synchrotron x-ray transmission microscopy of the sintering of multilayers
Yan, Zilin
Guillon, Olivier
Martin, Christophe L.
Wang, Steve
Lee, Chul-Seung
Bouvard, Didier
APPLIED PHYSICS LETTERS, 2013, 102 (22)
[24] In Situ X-ray Diffraction Study of the Phase Transition of Nanocrystalline In(OH)3 to In2O3
Hongliang Zhu
Naiyan Wang
Lina Wang
Kuihong Yao
Xiaofei Shen
Inorganic Materials, 2005, 41 : 609 - 612
[25] In situ x-ray diffraction study of the phase transition of nanocrystalline In(OH)3 to In2O3
Zhu, HL
Wang, NY
Wang, L
Yao, KH
Shen, XF
INORGANIC MATERIALS, 2005, 41 (06) : 609 - 612
[26] Determination of the Poisson ratio of (001) and (111) oriented thin films of In2O3 by synchrotron-based x-ray diffraction
Zhang, K. H. L.
Regoutz, A.
Palgrave, R. G.
Payne, D. J.
Egdell, R. G.
Walsh, A.
Collins, S. P.
Wermeille, D.
Cowley, R. A.
PHYSICAL REVIEW B, 2011, 84 (23):
[27] In-situ x-ray diffraction study of the growth of highly strained epitaxial BaTiO3 thin films
Sinsheimer, J.
Callori, S. J.
Ziegler, B.
Bein, B.
Chinta, P. V.
Ashrafi, A.
Headrick, R. L.
Dawber, M.
APPLIED PHYSICS LETTERS, 2013, 103 (24)
[28] In-situ observation of creep damage evolution in Al-Al2O3 MMCs by synchrotron X-ray microtomography
Huppmann, M.
Camin, B.
Pyzalla, A. R.
Reimers, W.
INTERNATIONAL JOURNAL OF MATERIALS RESEARCH, 2010, 101 (03) : 372 - 379
[29] Fabrication of epitaxial In2O3(ZnO)5 thin films by RF sputtering and their characterization by X-ray and electron diffraction techniques
Ohashi, N
Ogino, T
Sakaguchi, I
Hishita, S
Komatsu, M
Takenaka, T
Haneda, H
JOURNAL OF CRYSTAL GROWTH, 2002, 237 : 558 - 563
[30] In situ observation of ferroelectric 90°-domain switching in epitaxial Pb(Zr,Ti)O3 thin films by synchrotron x-ray diffraction
Lee, KS
Kim, YK
Baik, S
Kim, J
Jung, IS
APPLIED PHYSICS LETTERS, 2001, 79 (15) : 2444 - 2446

← 1 2 3 4 5 →