Blob Defect Prevention in 193nm Topcoat-free Immersion Lithography

被引:0
|
作者
Wang, Deyan [1 ]
Liu, Jinrong [1 ]
Kang, Doris [1 ]
Liu, Cong [1 ]
Estelle, Tom [1 ]
Xu, Cheng-Bai [1 ]
Barclay, George [1 ]
Trefonas, Peter [1 ]
机构
[1] Dow Chem Co USA, Dow Elect Mat, Marlborough, MA 01752 USA
关键词
D O I
10.1117/12.916818
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页数:8
相关论文
共 50 条
  • [21] Selection and evaluation of developer-Soluble topcoat for 193 nm immersion lithography
    Wei, Yayi
    Petrillo, K.
    Brandl, S.
    Goodwin, F.
    Benson, P.
    Housley, R.
    Okoroanyanwu, U.
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXIII, PTS 1 AND 2, 2006, 6153 : U170 - U181
  • [22] Circular apertures for contact hole patterning in 193nm immersion lithography
    Tay, Cho Jui
    Quan, Chenggen
    Ling, Moh Lung
    Lin, Qunying
    Tan, Sia Kim
    Chua, Gek Soon
    FOURTH INTERNATIONAL CONFERENCE ON EXPERIMENTAL MECHANICS, 2010, 7522
  • [23] Simulations of mask error enhancement factor in 193nm immersion lithography
    Yeh, KT
    Loong, WA
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4A): : 2481 - 2496
  • [24] 193nm immersion lithography for high performance silicon photonic circuits
    Selvaraja, Shankar Kumar
    Winroth, Gustaf
    Locorotondo, Sabrina
    Murdoch, Gayle
    Milenin, Alexey
    Delvaux, Christie
    Ong, Patrick
    Pathak, Shibnath
    Xie, Weiqiang
    Sterckx, Gunther
    Lepage, Guy
    Van Thourhout, Dries
    Bogaerts, Wim
    Van Campenhout, Joris
    Absil, Philippe
    OPTICAL MICROLITHOGRAPHY XXVII, 2014, 9052
  • [25] LWR Reduction by Photoresist Formulation Optimization for 193nm Immersion Lithography
    Hsu, Dennis Shu-Hao
    Hsieh, Wei-Hsien
    Huang, Chun-Yen
    Wu, Wen-Bin
    Shih, Chiang-Lin
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXIX, 2012, 8325
  • [26] Development of non-topcoat resist polymers for 193-nm immersion lithography
    Shirota, Naoko
    Takebe, Yoko
    Wang, Shu-Zhong
    Sasaki, Takashi
    Yokokoji, Osamu
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXIV, 2007, 6519
  • [27] Formation mechanism of 193nm immersion defects and defect reduction strategies
    Wei, Yayi
    Brandl, Stefan
    Goodwin, Frank
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923
  • [28] Rational design of high-RI resists for 193nm immersion lithography
    Whittaker, Andrew K.
    Blakey, Idriss
    Chen, Lan
    Dargaville, Bronwin
    Liu, Heping
    Conley, Will
    Zimmerman, Paul A.
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2007, 20 (05) : 665 - 671
  • [29] 193nm dual layer organic BARCs for high NA immersion lithography
    Abdallah, DJ
    Neisser, M
    Dammel, RR
    Pawlowski, G
    Ding, S
    Houlihan, FM
    Romano, AR
    Biafore, JJ
    Raub, A
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXII, PT 1 AND 2, 2005, 5753 : 417 - 435
  • [30] Development of an operational high refractive index resist for 193nm immersion lithography
    Zimmenrman, Paul A.
    Byers, Jeff
    Piscani, Emil
    Rice, Bryan
    Ober, Christopher K.
    Giannelis, Emmanuel P.
    Rodriguez, Robert
    Wang, Dongyan
    Whittaker, Andrew
    Blakey, Idriss
    Chen, Lan
    Dargaville, Bronwin
    Liu, Heping
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923