The roles of complexing agents on copper CMP

被引：0
|
作者：
Lim, G [1 ]
Kim, TE [1 ]
Lee, JH [1 ]
Kim, J [1 ]
Lee, HW [1 ]
机构：
[1] Korea Inst Sci & Technol, NMRC, Seoul 136791, South Korea
来源：
THIN FILM MATERIALS, PROCESSES, AND RELIABILITY: PLASMA PROCESSING FOR THE 100 NM NODE AND COPPER INTERCONNECTS WITH LOW-K INTER-LEVEL DIELECTRIC FILMS | 2003年 / 2003卷 / 13期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The effects of different complexing agents, glycine and ethylenediamine, on the stability of CMP slurry for copper and on overall CMP performance were investigated. According to the investigation, glycine did not affect the stability of SiO2 slurry whereas ethylenediamine shifted the iso-electric point of SiO2, making CMP slurry unstable. Electrostatic and actual CMP test were performed under different slurry conditions containing different complexing agents. Corrosion rate and resulting microstructure of reacted surface was strongly dependent on die slurry chemicals. Glycine based system make rather porous surface while ethylenediamine based one make relatively dense surface. H2O2-ethylenediamine system showed similar pH dependency between static corrosion rate and dynamic polishing rate whereas H2O2-glycine system showed totally different tendency.
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页码：266 / 271
页数：6
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