Electrical switching of the edge channel transport in HgTe quantum wells with an inverted band structure

被引：81
|
作者：
Zhang, L. B. [1 ]
Cheng, F. [1 ,2 ]
Zhai, F. [3 ,4 ]
Chang, Kai [1 ,5 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China
[2] Changsha Univ Sci & Technol, Dept Phys & Elect Sci, Changsha 410004, Hunan, Peoples R China
[3] Zhejiang Normal Univ, Ctr Stat & Theoret Condensed MatterPhys, Jinhua 321004, Peoples R China
[4] Zhejiang Normal Univ, Dept Phys, Jinhua 321004, Peoples R China
[5] Beijing Computat Sci Res Ctr, Beijing 100089, Peoples R China
来源：
PHYSICAL REVIEW B | 2011年 / 83卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.83.081402
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We demonstrate theoretically an electrical switching of the edge-state transport by means of a quantum point contact in HgTe quantum wells with an inverted band structure. The switch-on/off of the edge channel is caused by the finite size effect of the quantum point contact and therefore can be manipulated by tuning the voltage applied on the split gate. This electrical switching behavior offers us an efficient way to control the topological edge state transport which is robust against the local perturbation.
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页数：4
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