Energy spectrum and transport in narrow HgTe quantum wells

被引：0
|
作者：
A. V. Germanenko
G. M. Minkov
O. E. Rut
A. A. Sherstobitov
S. A. Dvoretsky
N. N. Mikhailov
机构：
[1] Ural Federal University,Institute of Natural Sciences
[2] Russian Academy of Sciences,Institute of Metal Physics, Ural Branch
[3] Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch
来源：
Semiconductors | 2015年 / 49卷
关键词：
Fourier Spectrum; Landau Level; Hole Concentration; HgTe; Hole Effective Mass;
D O I：
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中图分类号：
学科分类号：
摘要：
The results of an experimental study of the transport phenomena and the hole energy spectrum of two-dimensional systems in the quantum well of HgTe zero-gap semiconductor with normal arrangement of quantum-confinement subbands are presented. An analysis of the experimental data allows us to reconstruct the carrier energy spectrum near the hole subband extrema. The results are interpreted using the standard kP model.
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页码：39 / 43
页数：4
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