Metal-mirror-based resonant-cavity enhanced light-emitting diodes by the use of a tunnel diode contact

被引：5
|
作者：
Zhu, R [1 ]
Hargis, MC
Woodall, JM
Melloch, MR
机构：
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[2] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 02期
基金：
美国国家科学基金会;
关键词：
light-emitting diode; optical communications; resonant cavity; tunnel diode;
D O I：
10.1109/68.910502
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We, for the first time, designed and fabricated resonant-cavity light-emitting diodes for high-speed optical communications using a tunnel diode contact scheme. Use of a tunnel diode provides extra freedom in designing the device contact and cavity mirror, which allows the realization of a resonant cavity without requiring distributed Bragg reflectors. The fabricated resonant-cavity light-emitting diodes have half the spectrum bandwidth and nearly triple the fiber-coupled power of noncavity devices.
引用
收藏
页码：103 / 105
页数：3
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