Metal-mirror-based resonant-cavity enhanced light-emitting diodes by the use of a tunnel diode contact

被引：5
|
作者：
Zhu, R [1 ]
Hargis, MC
Woodall, JM
Melloch, MR
机构：
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[2] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 02期
基金：
美国国家科学基金会;
关键词：
light-emitting diode; optical communications; resonant cavity; tunnel diode;
D O I：
10.1109/68.910502
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We, for the first time, designed and fabricated resonant-cavity light-emitting diodes for high-speed optical communications using a tunnel diode contact scheme. Use of a tunnel diode provides extra freedom in designing the device contact and cavity mirror, which allows the realization of a resonant cavity without requiring distributed Bragg reflectors. The fabricated resonant-cavity light-emitting diodes have half the spectrum bandwidth and nearly triple the fiber-coupled power of noncavity devices.
引用
收藏
页码：103 / 105
页数：3
相关论文
共 50 条
  • [21] InGaN Resonant-Cavity Light-Emitting Diodes with Porous and Dielectric Reflectors
    Wang, Cheng-Jie
    Ke, Ying
    Shiu, Guo-Yi
    Chen, Yi-Yun
    Lin, Yung-Sen
    Chen, Hsiang
    Lin, Chia-Feng
    APPLIED SCIENCES-BASEL, 2021, 11 (01): : 1 - 8
  • [22] RESONANT-CAVITY LIGHT-EMITTING DIODE AND DETECTOR USING EPITAXIAL LIFTOFF
    CORBETT, B
    CONSIDINE, L
    WALSH, S
    KELLY, WM
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (09) : 1041 - 1043
  • [23] Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes
    Lin, CF
    Yao, HH
    Lu, JW
    Hsieh, YL
    Kuo, HC
    Wang, SC
    JOURNAL OF CRYSTAL GROWTH, 2004, 261 (2-3) : 359 - 363
  • [24] Emission dynamics of GaN-based blue resonant-cavity light-emitting diodes
    Xu, Rong-Bin
    Xu, Huan
    Mei, Yang
    Shi, Xiao-Ling
    Ying, Lei-Ying
    Zheng, Zhi-Wei
    Long, Hao
    Qiu, Zhi-Ren
    Zhang, Bao-Ping
    Liu, Jian-Ping
    Kuo, Hao-Chung
    JOURNAL OF LUMINESCENCE, 2019, 216
  • [25] INP/INGAAS RESONANT-CAVITY ENHANCED PHOTODETECTOR AND LIGHT-EMITTING DIODE WITH EXTERNAL MIRRORS ON SI
    SALVADOR, A
    HUANG, F
    SVERDLOV, B
    BOTCHKAREV, AE
    MORKOC, H
    ELECTRONICS LETTERS, 1994, 30 (18) : 1527 - 1529
  • [26] GaN-on-Si micro resonant-cavity light-emitting diodes with dielectric and metal mirrors
    Wang, Tao
    Zhang, Xiaodong
    Liu, Yan
    Chong, Wingcheung
    Huang, Zijing
    Lu, Ziyuan
    Zhang, Xu
    Shi, Wenhua
    Wang, Qianjing
    Zeng, Zhongming
    Zhang, Baoshun
    OPTICAL MATERIALS, 2023, 143
  • [27] Fabrication and characterization of InGaN resonant-cavity light-emitting diodes on silicon substrates
    Huang, Shih-Yung
    Horng, Ray-Hua
    Wang, Wei-Kai
    Wuu, Don-Sing
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 2137 - 2140
  • [28] High-efficiency semiconductor resonant-cavity light-emitting diodes: A review
    Delbeke, D
    Bockstaele, R
    Bienstman, P
    Baets, R
    Benisty, H
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) : 189 - 206
  • [29] Resonant-cavity InGaN quantum-well blue light-emitting diodes
    Song, YK
    Diagne, M
    Zhou, H
    Nurmikko, AV
    Schneider, RP
    Takeuchi, T
    APPLIED PHYSICS LETTERS, 2000, 77 (12) : 1744 - 1746
  • [30] 3.2 MU-M INFRARED RESONANT-CAVITY LIGHT-EMITTING DIODE
    HADJI, E
    BLEUSE, J
    MAGNEA, N
    PAUTRAT, JL
    APPLIED PHYSICS LETTERS, 1995, 67 (18) : 2591 - 2593
12345