Direct growth of CdTe thick films on the Medipix2 pixel detector chip

被引：3

作者：

Sorgenfrei, R. ^{[1
]}

Zwerger, A. ^{[1
]}

Disch, C. ^{[1
]}

Bachem, K. H. ^{[1
]}

Fiederle, M. ^{[1
]}

机构：

[1] Univ Freiburg, Freiburger Mat Forschungszentrum, D-79104 Freiburg, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 09期

关键词：

STABLE BACK CONTACTS; WORK FUNCTION; STABILITY;

D O I：

10.1063/1.3492694

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline CdTe layers were directly deposited on the Medipix2 readout chip by physical vapor deposition using a Riber molecular beam epitaxy 2300. Sb2Te3 was evaporated as backside contact material, resulting in an M-pi-p diode structure comprising the pixel contact material, the intentionally undoped CdTe, and Sb2Te3. It was possible to achieve x-ray images at 60 kVp. In addition, thermally oxidized Si wafers were coated with a comparable M-pi-p structure grown under identical conditions, to investigate electrical properties of the films. The specific resistance of the layers was found to be 3.85 x 10(8) Omega cm. (C) 2010 American Institute of Physics. [doi:10.1063/1.3492694]

引用

页数：4

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