A comparison of the low frequency noise in InSb grown on GaAs and Si by MBE

被引：0
|
作者：
Dobbert, Julia [1 ]
Tran, Lien [1 ]
Hatami, Fariba [1 ]
Kunets, Vasyl P. [2 ]
Salamo, Gregory J. [2 ]
Masselink, W. Ted [1 ]
机构：
[1] Humboldt Univ, Dept Phys, D-12489 Berlin, Germany
[2] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2011年 / 323卷 / 01期
关键词：
Characterization; Molecular beam epitaxy; Antimonides; Semiconducting III-V materials; Semiconducting indium compounds; QUANTUM 1/F NOISE;
D O I：
10.1016/j.jcrysgro.2010.12.039
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The influence of MBE growth conditions on the low frequency noise features of 1.8 mu m thick layers of InSb is examined. Low Hooge factors down to 2 x 10(-5), which are close to those of pure InSb, show that these material systems are candidates for sensor and other electronic applications. The temperature dependence of the Hooge factors could give further insight in the origins of flicker noise. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：393 / 396
页数：4
相关论文
共 50 条
  • [1] Low frequency noise in InSb/GaAs and InSb/Si channels
    Dobbert, J.
    Tran, L.
    Hatami, F.
    Masselink, W. T.
    Kunets, Vas. P.
    Salamo, G. J.
    APPLIED PHYSICS LETTERS, 2010, 97 (10)
  • [2] Spectroscopy of low-frequency noise in δ-doped GaAs grown by MBE
    Chen, XY
    Koenraad, P
    Hooge, FN
    Wolter, JH
    NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE, 1997, : 457 - 460
  • [3] Comparison of MBE Growth of InSb on Si (001) and GaAs (001)
    Tran, T. Lien
    Hatami, Fariba
    Maselink, W. Ted
    Kunets, Vas P.
    Salamo, G. J.
    JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (12) : 1799 - 1805
  • [4] Comparison of MBE Growth of InSb on Si (001) and GaAs (001)
    T. Lien Tran
    Fariba Hatami
    W. Ted Masselink
    Vas P. Kunets
    G.J. Salamo
    Journal of Electronic Materials, 2008, 37 : 1799 - 1805
  • [5] PROPERTIES OF MBE GROWN HETEROSTRUCTURES OF GAAS/INSB AND INP/INSB
    ASOM, MT
    FITZGERALD, EA
    THIEL, FA
    PEOPLE, R
    EAGLESHAM, D
    LUTHER, L
    SPUTZ, SK
    KIMERLING, LC
    III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES, 1989, 145 : 399 - 404
  • [6] OBSERVATION AND CONTROL OF THE AMPHOTERIC BEHAVIOR OF SI-DOPED INSB GROWN ON GAAS BY MBE
    PARKER, SD
    WILLIAMS, RL
    DROOPAD, R
    STRADLING, RA
    BARNHAM, KWJ
    HOLMES, SN
    LAVERTY, J
    PHILLIPS, CC
    SKURAS, E
    THOMAS, R
    ZHANG, X
    STATONBEVAN, A
    PASHLEY, DW
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (08) : 663 - 676
  • [7] Effects of quantum confinement on low frequency noise in 8-doped GaAs structures grown by MBE
    Chen, XY
    Koenraad, PM
    FLUCTUATION AND NOISE LETTERS, 2002, 2 (01): : L37 - L45
  • [8] HEAVILY SI OR BE DOPED MBE GAAS GROWN AT LOW-TEMPERATURES
    MCQUAID, SA
    NEWMAN, RC
    MISSOUS, M
    OHAGAN, S
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 515 - 518
  • [9] Characteristics of Si and Be δ-codoped GaAs grown by MBE
    Yonekubo, S
    Ichiryu, D
    Horikoshi, Y
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 88 - 92
  • [10] MBE GROWN CDTE-FILMS ON (001)GAAS AND (001)INSB
    MAR, HA
    CHEE, KT
    SALANSKY, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 217 - 218
12345