HEAVILY SI OR BE DOPED MBE GAAS GROWN AT LOW-TEMPERATURES

被引：19
|
作者：
MCQUAID, SA
NEWMAN, RC
MISSOUS, M
OHAGAN, S
机构：
[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,POB 88,MANCHESTER M60 1QD,LANCS,ENGLAND
[2] UNIV MANCHESTER,INST SCI & TECHNOL,CTR ELECTR MAT,MANCHESTER M60 1QD,LANCS,ENGLAND
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(93)90673-K
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Infrared absorption due to the localized vibrational modes of Si and Be has been investigated in low temperature molecular beam epitaxial GaAs. A spectrum from Si(Ga)-V(Ga) has been found, but pairing of Be(Ga) was not detected. Anneals of the Si doped layers led to Si-site switching and an apparent loss of silicon from solution. A comparison is made with a previous study of neutron irradiated Si doped GaAs.
引用
收藏
页码：515 / 518
页数：4
相关论文
共 50 条
  • [1] COMPENSATION MECHANISM IN HEAVILY SI-DOPED GAAS GROWN BY MBE
    UEMATSU, M
    MAEZAWA, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (04): : L527 - L529
  • [2] Compensation mechanism in heavily Si-doped GaAs grown by MBE
    [J]. Uematsu, Masashi, 1600, (29):
  • [3] SI DOPING EFFICIENCY IN GAAS GROWN AT LOW-TEMPERATURES
    WINER, K
    KAWASHIMA, M
    HORIKOSHI, Y
    [J]. APPLIED PHYSICS LETTERS, 1991, 58 (24) : 2818 - 2820
  • [4] ON THE ELECTRON-MOBILITY IN SLIGHTLY COMPENSATED HEAVILY-DOPED GAAS AT LOW-TEMPERATURES
    QUANG, DN
    DAT, NN
    VANAN, D
    [J]. PHYSICS LETTERS A, 1993, 182 (01) : 125 - 129
  • [5] GALLIUM VACANCY RELATED DEFECTS IN SILICON DOPED GAAS GROWN AT LOW-TEMPERATURES
    MCQUAID, SA
    PRITCHARD, RE
    NEWMAN, RC
    OHAGAN, S
    MISSOUS, M
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 22 (01): : 23 - 26
  • [6] THERMOELECTRIC EFFECTS OF HEAVILY DOPED SEMICONDUCTORS AT LOW-TEMPERATURES
    VANCONG, H
    MESNARD, G
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 50 (01): : 53 - &
  • [7] OSCILLATORY MAGNETORESISTANCE OF HEAVILY DOPED SEMICONDUCTORS AT LOW-TEMPERATURES
    VANCONG, H
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (22): : 3275 - 3281
  • [8] PHOTOLUMINESCENCE FROM MBE SI GROWN AT LOW-TEMPERATURES - DONOR BOUND EXCITONS AND DECORATED DISLOCATIONS
    HIGGS, V
    LIGHTOWLERS, EC
    DAVIES, G
    SCHAFFLER, F
    KASPER, E
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (07) : 593 - 598
  • [9] Electrical conduction properties of Si δ-doped GaAs grown by MBE
    Yildiz, A.
    Lisesivdin, S. B.
    Altuntas, H.
    Kasap, M.
    Ozcelik, S.
    [J]. PHYSICA B-CONDENSED MATTER, 2009, 404 (21) : 4202 - 4206
  • [10] Crystal Lattice Defects in MBE Grown Si Layers Heavily Doped with Er
    Zakharov, N. D.
    Werner, P.
    Vdovin, V. I.
    Denisov, D. V.
    Sobolev, N. A.
    Goesele, U.
    [J]. MICROSCOPY OF SEMICONDUCTING MATERIALS 2007, 2008, 120 : 115 - +
12345