A comparison of the low frequency noise in InSb grown on GaAs and Si by MBE

被引：0
|
作者：
Dobbert, Julia [1 ]
Tran, Lien [1 ]
Hatami, Fariba [1 ]
Kunets, Vasyl P. [2 ]
Salamo, Gregory J. [2 ]
Masselink, W. Ted [1 ]
机构：
[1] Humboldt Univ, Dept Phys, D-12489 Berlin, Germany
[2] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2011年 / 323卷 / 01期
关键词：
Characterization; Molecular beam epitaxy; Antimonides; Semiconducting III-V materials; Semiconducting indium compounds; QUANTUM 1/F NOISE;
D O I：
10.1016/j.jcrysgro.2010.12.039
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The influence of MBE growth conditions on the low frequency noise features of 1.8 mu m thick layers of InSb is examined. Low Hooge factors down to 2 x 10(-5), which are close to those of pure InSb, show that these material systems are candidates for sensor and other electronic applications. The temperature dependence of the Hooge factors could give further insight in the origins of flicker noise. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：393 / 396
页数：4
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