Nitrogen delta doping in 6H silicon carbide layers

被引：9

作者：

Yokogawa, T ^{[1
]}

Takahashi, K ^{[1
]}

Uenoyama, T ^{[1
]}

Kusumoto, O ^{[1
]}

Uchida, M ^{[1
]}

Kitabatake, M ^{[1
]}

机构：

[1] Matsushita Elect Ind Co Ltd, Adv Technol Res Labs, Seika, Kyoto 6190237, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 03期

关键词：

D O I：

10.1063/1.1337937

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitrogen delta-doped silicon carbide (SiC) layers were grown by a pulse doping method in a chemical vapor deposition. Doping distribution with high peak concentration (1 x 10(18) cm(-3)) and narrow distribution width (12 nm) was fabricated in the nitrogen delta-doped structure of SiC. Mobility enhancement due to spatial separation of electrons and their ionized parent donors was observed for the delta-doped structure. Metal-semiconductor field-effect transistors with a nitrogen delta-doped channel and a recess gate structure were fabricated. The devices had large source-drain (200 V) and source-gate (140 V) breakdown voltages, high drain current capability and easy control of the threshold voltage with a good pinch-off characteristics. (C) 2001 American Institute of Physics.

引用

页码：1794 / 1799

页数：6

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