Nitrogen delta doping in 6H silicon carbide layers

Nitrogen delta-doped silicon carbide (SiC) layers were grown by a pulse doping method in a chemical vapor deposition. Doping distribution with high peak concentration (1 x 10(18) cm(-3)) and narrow distribution width (12 nm) was fabricated in the nitrogen delta-doped structure of SiC. Mobility enhancement due to spatial separation of electrons and their ionized parent donors was observed for the delta-doped structure. Metal-semiconductor field-effect transistors with a nitrogen delta-doped channel and a recess gate structure were fabricated. The devices had large source-drain (200 V) and source-gate (140 V) breakdown voltages, high drain current capability and easy control of the threshold voltage with a good pinch-off characteristics. (C) 2001 American Institute of Physics.