Bonding temperature dependence of GaInAsP/InP wafer grown on directly bonded InP/Si substrate

被引：0
|
作者：
Aikawa, Masaki [1 ]
Nishiyama, Tetsuo [1 ]
Onuki, Yuya [1 ]
Kamada, Naoki [1 ]
Han, Xu [1 ]
Periyanayagam, Gandhi Kallarasan [1 ]
Uchida, Kazuki [1 ]
Sugiyama, Hirokazu [1 ]
Hayasaka, Natsuki [1 ]
Shimomura, Kazuhiko [1 ]
机构：
[1] Sophia Univ, Dept Engn & Appl Sci, Chiyoda Ku, 7-1 Kioicho, Tokyo 1028554, Japan
来源：
2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) | 2017年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Bonding temperature dependence on the surface conditions and optical characteristics of MOVPE grown GaInAsP/InP laser structure using directly bonded InP/Si substrate were studied. We have changed the temperature for bonding InP and Si substrate between 350 and 450 degrees C. The void density and photoluminescence intensity were examined.
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页码：75 / 75
页数：1
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