Selective MOVPE growth of GaInAs/InP MQW on directly-bonded InP/Si substrate

An ultrathin InP template with extremely low defect density was realized on Si substrate using wet etching and wafer direct bonding technique. On top of the InP/Si substrate, asymmetric SiO2 mask pattern on one side of the arrayed waveguides was prepared and selective metal-organic vapor-phase epitaxy (MOVPE) growth has been demonstrated. According to the cross-sectional scanning electron micrograph (SEM) images, gradually varied height of GaInAs/InP multiple quantum well (MQW) structures were realized on the substrate and photoluminescence (PL) measurement showed different band-gaps of the MQW structures. Our approach is of importance to control the in-plane band-gap energy for the integration of InP-based various functional devices on Si substrate.