Normal incidence infrared modulators using intersubband transitions in InAs/GaSb/AlSb stepped quantum wells grown by molecular beam epitaxy

被引：0
|
作者：
Du, Q
Alperin, J
Wang, WI
机构：
[1] Department of Electrical Engineering, Columbia University, New York
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 03期
关键词：
D O I：
10.1116/1.588856
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Normal incidence infrared (3-5 mu m) modulators based on AlSb/InAs/Al0.4Ga0.6Sb/GaSb/AlSb stepped quantum wells have been successfully grown on (100) GaSb substrates by molecular beam epitaxy, X-ray diffraction characterization showed sharp satellite peaks. The devices were fabricated and measured using a Fourier transform infrared spectrometer at 77 K. The largest normal incidence infrared absorption coefficient (alpha) of 3200 cm(-1) at 5 mu m has been obtained at 14 V applied reverse bias. (C) 1996 American Vacuum Society.
引用
收藏
页码：2343 / 2345
页数：3
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