Technology review and assessment of nanoimprint lithography for semiconductor and patterned media manufacturing

被引:70
|
作者
Malloy, Matt [1 ]
Litt, Lloyd C. [1 ]
机构
[1] SEMATECH, Albany, NY 12203 USA
来源
关键词
nanoimprint; jet and flash imprint lithography; step and flash imprint lithography; jet and flash; step and flash; patterned media; FLASH IMPRINT LITHOGRAPHY; STEP; NANOFABRICATION; RESOLUTION;
D O I
10.1117/1.3642641
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The semiconductor and hard disk drive industries are investigating nanoimprint for future high volume manufacturing of memory devices and patterned media. Nanoimprint, a form of 1 x contact lithography, is one of the few technologies capable of meeting the resolution requirements for next generation electronic and storage devices. Its ability to produce small features with low line width roughness and critical dimension uniformity has been demonstrated by multiple sources. Significant improvements in defectivity have been shown; overlay has improved to within a factor of 2 of that required by the International Technology Roadmap for Semiconductors for 22 nm node flash memory devices; and next generation tools, templates, and processes are being commercialized and tested at end-user sites. Defectivity, throughput, and infrastructure remain as critical challenges, but each has experienced marked improvements in the past year. This technology review and assessment covers critical aspects of nanoimprint for both semiconductor and patterned media manufacturing. It focuses on jet and flash imprint lithography, the type of nanoimprint most often considered for these two applications. The requirements and current status of nanoimprint with respect to high volume manufacturing are presented, and critical aspects are discussed. (C) 2011 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.3642641]
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页数:13
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