Characterization and simulation of signal propagation and crosstalk on advanced Cu-SiO2 on-chip interconnects for high speed circuits

被引：4

作者：

Bermond, C ^{[1
]}

Fléchet, B ^{[1
]}

Arnal, V ^{[1
]}

Farcy, A ^{[1
]}

Torres, J ^{[1
]}

Morand, Y ^{[1
]}

Le Carval, G ^{[1
]}

Charlet, F ^{[1
]}

Angénieux, G ^{[1
]}

机构：

[1] Univ Savoie, LAHC, F-73376 Le Bourget Du Lac, France

来源：

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2001年

关键词：

D O I：

10.1109/IITC.2001.930030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical high-speed signal characterization and simulation are presented for Cu/SiO2 on-chip wiring structure. Propagation constant, characteristic impedance and R, L, C, G matrices are extracted from frequency measurements in a whole spectrum and compared to values obtained by EM modeling. Very good agreement is reported between measured and simulated signals for propagation and crosstalk waveforms. Next, from previous results, highspeed signal propagation along interconnects is simulated to investigate electrical performances as a function of design. Impact of copper wiring, low k-dielectrics and geometry on electrical performance in terms of signal propagation and crosstalk level are studied.

引用

页码：104 / 106

页数：3

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