Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition

被引：0

作者：

Dupuis, RD ^{[1
]}

Grudowski, PA ^{[1
]}

Eiting, CJ ^{[1
]}

Shmagin, IC ^{[1
]}

Kolbas, RM ^{[1
]}

Rosner, SJ ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA

来源：

1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe the optical and structural properties of InGaN multiple-quantum-well (MQW) heterostructures grown by metalorganic chemical vapor deposition on (0001) sapphire substrates. These structures consist of InxGa1-xN quantum wells and InxGa1-yN barrier layers with GaN or AlGaN cladding layers. A comparison of the 300K photoluminescence spectra of these samples indicates that the emission from the quantum well structure is not strongly affected by the high-temperature overlayer growth of GaN or AlGaN films. X-ray diffraction scans show superlattice peaks and indicate that the MQW's are fully strained.

引用

页码：231 / 234

页数：4

共 50 条

[21] Dislocation behavior in InGaN/GaN multi-quantum-well structure grown by metalorganic chemical vapor deposition
Kim, YW
Suh, EK
Lee, HJ
[J]. APPLIED PHYSICS LETTERS, 2002, 80 (21) : 3949 - 3951
[22] Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition
Lee, Z. S.
Feng, Z. C.
Li, A. G.
Tsai, H. L.
Yang, J. R.
Chen, Y. F.
Li, N.
Ferguson, I. T.
Lu, W.
[J]. SEVENTH INTERNATIONAL CONFERENCE ON SOLID STATE LIGHTING, 2007, 6669
[23] Structural and optical properties of InGaN/GaN triangularshaped quantum wells grown by metalorganic chemical vapor depostion
Choi, Rak Jun
Hahn, Yoon-Bong
[J]. NEW DEVELOPMENT AND APPLICATION IN CHEMICAL REACTION ENGINEERING, 4TH ASIA-PACIFIC CHEMICAL REACTION ENGINEERING SYMPOSIUM (APCRE 05), 2006, 159 : 369 - 372
[24] GAALAS/GAAS QUANTUM-WELL LASERS BY METALORGANIC CHEMICAL-VAPOR DEPOSITION
BURNHAM, RD
PAOLI, TL
STREIFER, W
HOLONYAK, N
SCIFRES, DR
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1984, 1 (03) : 542 - 544
[25] Phase separation in InGaN grown by metalorganic chemical vapor deposition
El-Masry, NA
Piner, EL
Liu, SX
Bedair, SM
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (01) : 40 - 42
[26] Recombination mechanism of InGaN multiple quantum wells grown by metalorganic chemical vapor deposition
Feng, ZC
Liu, W
Chua, SJ
Chen, JH
Yang, CC
Lu, W
Collins, WE
[J]. Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07): : 2377 - 2380
[27] Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition
Suihkonen, S.
Lang, T.
Svensk, O.
Sormunen, J.
Torma, P. T.
Sopanen, M.
Lipsanen, H.
Odnoblyudov, M. A.
Bougrov, V. E.
[J]. JOURNAL OF CRYSTAL GROWTH, 2007, 300 (02) : 324 - 329
[28] Metalorganic chemical vapor deposition selective growth and characterization of InGaN quantum dots
Wang, J
Nozaki, M
Lachab, M
Ishikawa, Y
Fareed, RSQ
Wang, T
Hao, M
Sakai, S
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (07) : 950 - 952
[29] NONLINEAR ABSORPTION IN ALGAAS/GAAS MULTIPLE QUANTUM-WELL STRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
LEE, HC
HARIZ, A
DAPKUS, PD
KOST, A
KAWASE, M
GARMIRE, E
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1182 - 1184
[30] Investigation on time-resolved photoluminescence of InGaN single quantum well structure grown by metalorganic chemical vapor deposition
Yuan Jinshe
Wang Mingyue
Yu Guohao
[J]. SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, 2008, 6841

← 1 2 3 4 5 →