Structural and optical properties of InGaN/GaN triangularshaped quantum wells grown by metalorganic chemical vapor depostion

被引：0
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作者：
Choi, Rak Jun [1 ]
Hahn, Yoon-Bong [1 ]
机构：
[1] Chonbuk Natl Univ, Sch Chem Engn & Technol, Nanomat Proc Res Ctr, Jeonju 561576, South Korea
来源：
NEW DEVELOPMENT AND APPLICATION IN CHEMICAL REACTION ENGINEERING, 4TH ASIA-PACIFIC CHEMICAL REACTION ENGINEERING SYMPOSIUM (APCRE 05) | 2006年 / 159卷
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中图分类号：
TQ [化学工业];
学科分类号：
0817 ;
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页码：369 / 372
页数：4
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