Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition

被引：0

作者：

Dupuis, RD ^{[1
]}

Grudowski, PA ^{[1
]}

Eiting, CJ ^{[1
]}

Shmagin, IC ^{[1
]}

Kolbas, RM ^{[1
]}

Rosner, SJ ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA

来源：

1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe the optical and structural properties of InGaN multiple-quantum-well (MQW) heterostructures grown by metalorganic chemical vapor deposition on (0001) sapphire substrates. These structures consist of InxGa1-xN quantum wells and InxGa1-yN barrier layers with GaN or AlGaN cladding layers. A comparison of the 300K photoluminescence spectra of these samples indicates that the emission from the quantum well structure is not strongly affected by the high-temperature overlayer growth of GaN or AlGaN films. X-ray diffraction scans show superlattice peaks and indicate that the MQW's are fully strained.

引用

页码：231 / 234

页数：4

共 50 条

[1] Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition
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Grudowski, PA
Eiting, CJ
Shmagin, IC
Kolbas, RM
Rosner, SJ
[J]. COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 231 - 234
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