Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition

We describe the optical and structural properties of InGaN multiple-quantum-well (MQW) heterostructures grown by metalorganic chemical vapor deposition on (0001) sapphire substrates. These structures consist of InxGa1-xN quantum wells and InyGa1-yN barrier layers with GaN or AlGaN cladding layers. A comparison of the 300K photoluminescence spectra of these samples indicates that the emission from the quantum well structure is not strongly affected by the high-temperature overlayer growth of GaN or AlGaN films. X-ray diffraction scans show superlattice peaks and indicate that the MQW's are fully strained.