1.3-μm Mode-Locked Disk Laser With Wafer Fused Gain and SESAM Structures

被引：13

作者：

Rautiainen, Jussi ^{[1
]}

Lyytikainen, Jari ^{[1
]}

Toikkanen, Lauri ^{[1
]}

Nikkinen, Jari ^{[1
]}

Sirbu, Alexei ^{[2
]}

Mereuta, Alexandru ^{[2
]}

Caliman, Andrei ^{[2
]}

Kapon, Eli ^{[2
]}

Okhotnikov, Oleg G. ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, Tampere 33720, Finland

[2] Ecole Polytech Fed Lausanne, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2010年 / 22卷 / 11期

关键词：

Mode-locked lasers; optical pumping; quantum-well (QW) lasers; semiconductor lasers; surface-emitting lasers; MU-M; FUSION; WAVELENGTH; POWER;

D O I：

10.1109/LPT.2010.2045494

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report 1.3-mu m mode-locked optically pumped semiconductor disk laser (SDL) made by wafer fusion. The gain medium and the saturable absorber, both based on an InP material system, were integrated with AlGaAs-GaAs distributed Bragg reflectors by localized wafer fusion. An intracavity wedged diamond heat spreader capillary bonded to the gain chip prevents the disruption of 6.4-ps pulse spectrum and supports 100 mW of average power. The results reveal an advantage of wafer fusion process of disparate materials over monolithically grown InP-based gain/absorber structures and demonstrate practical potential of the technique for long-wavelength SDLs.

引用

页码：748 / 750

页数：3

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