1.3-μm Mode-Locked Disk Laser With Wafer Fused Gain and SESAM Structures

被引:13
|
作者
Rautiainen, Jussi [1 ]
Lyytikainen, Jari [1 ]
Toikkanen, Lauri [1 ]
Nikkinen, Jari [1 ]
Sirbu, Alexei [2 ]
Mereuta, Alexandru [2 ]
Caliman, Andrei [2 ]
Kapon, Eli [2 ]
Okhotnikov, Oleg G. [1 ]
机构
[1] Tampere Univ Technol, Optoelect Res Ctr, Tampere 33720, Finland
[2] Ecole Polytech Fed Lausanne, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland
关键词
Mode-locked lasers; optical pumping; quantum-well (QW) lasers; semiconductor lasers; surface-emitting lasers; MU-M; FUSION; WAVELENGTH; POWER;
D O I
10.1109/LPT.2010.2045494
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report 1.3-mu m mode-locked optically pumped semiconductor disk laser (SDL) made by wafer fusion. The gain medium and the saturable absorber, both based on an InP material system, were integrated with AlGaAs-GaAs distributed Bragg reflectors by localized wafer fusion. An intracavity wedged diamond heat spreader capillary bonded to the gain chip prevents the disruption of 6.4-ps pulse spectrum and supports 100 mW of average power. The results reveal an advantage of wafer fusion process of disparate materials over monolithically grown InP-based gain/absorber structures and demonstrate practical potential of the technique for long-wavelength SDLs.
引用
收藏
页码:748 / 750
页数:3
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