Simple, small-sized, lock-in light detection system using a gated Si avalanche photodiode

被引：3

作者：

Miyata, T ^{[1
]}

Iwata, T ^{[1
]}

Araki, T ^{[1
]}

机构：

[1] Niihama Natl Coll Technol, Dept Mech Engn, Niihama 7928580, Japan

来源：

OPTICAL ENGINEERING FOR SENSING AND NANOTECHNOLOGY (ICOSN 2001) | 2001年 / 4416卷

关键词：

lock-in amplifier; avalanche photodiode; gated APD; light detection; instrument;

D O I：

10.1117/12.426999

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have constructed a simple, small-sized, lock-in light detection system using a gated Si avalanche photo-diode (APD). The gate mode operation of the APD was achieved by a transistor-transistor-logic (TTL) signal superimposed on a direct-current (dc) bias not exceeding the breakdown voltage of the A-PD. The attainable gain was thirty times larger than that obtained by the normal dc-biased APD. The APD is operated at a frequency of 2f (= 20 kHz) and its output signal is fed into a compact, laboratory-made lock-in amplifier that works in synchronous with the gated APD at a frequency f (= 10 kHz). The system is useful for detecting a weak signal light superimposed on a large background.

引用

页码：444 / 447

页数：4

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