Simple, small-sized, lock-in light detection system using a gated Si avalanche photodiode

被引:3
|
作者
Miyata, T [1 ]
Iwata, T [1 ]
Araki, T [1 ]
机构
[1] Niihama Natl Coll Technol, Dept Mech Engn, Niihama 7928580, Japan
来源
OPTICAL ENGINEERING FOR SENSING AND NANOTECHNOLOGY (ICOSN 2001) | 2001年 / 4416卷
关键词
lock-in amplifier; avalanche photodiode; gated APD; light detection; instrument;
D O I
10.1117/12.426999
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We have constructed a simple, small-sized, lock-in light detection system using a gated Si avalanche photo-diode (APD). The gate mode operation of the APD was achieved by a transistor-transistor-logic (TTL) signal superimposed on a direct-current (dc) bias not exceeding the breakdown voltage of the A-PD. The attainable gain was thirty times larger than that obtained by the normal dc-biased APD. The APD is operated at a frequency of 2f (= 20 kHz) and its output signal is fed into a compact, laboratory-made lock-in amplifier that works in synchronous with the gated APD at a frequency f (= 10 kHz). The system is useful for detecting a weak signal light superimposed on a large background.
引用
收藏
页码:444 / 447
页数:4
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