Charge transfer in photorefractive CdTe:Ge at different wavelengths

被引:12
|
作者
Shcherbin, K
Odoulov, S
Ramaz, F
Farid, B
Briat, B
von Bardeleben, HJ
Delaye, P
Roosen, G
机构
[1] Inst Phys, UA-03650 Kiev, Ukraine
[2] Ecole Super Phys & Chim Ind Ville Paris, Lab Opt Phys, F-75231 Paris 05, France
[3] Univ Paris 06, Phys Solides Grp, F-75231 Paris 05, France
[4] Univ Paris 07, Phys Solides Grp, F-75231 Paris 05, France
[5] Ctr Sci Orsay, Lab Charles Fabry, Inst Opt, F-91403 Orsay, France
关键词
photorefractive semiconductors; cadmium telluride; CdTe : Ge;
D O I
10.1016/S0925-3467(01)00154-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The charge transfer processes in photorefractive CdTe:Ge were modeled using the data of optical absorption, magnetic circular dichroism (MCD) and electron paramagnetic resonance (EPR) spectroscopies. Within the developed model the variations in the photorefractive properties of different CdTe:Ge samples are explained by differences in the relative concentrations of donor and trap centers. The existence of two different centers of comparable concentrations, each in two charge states, allows charge redistribution between them and gives rise to optical sensitization of some CdTe:Ge samples for photorefractive recording under an auxiliary illumination. In the present article we follow the proposal of pseudo-3D presentation of light-induced absorption to distinguish the main charge transfer processes at different excitation energies and explain the sensitization of CdTe:Ge for photorefractive recording at 1.06, 1.32 and 1.55 mum by light with appropriate wavelength. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:151 / 154
页数:4
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