Charge transfer in photorefractive CdTe:Ge at different wavelengths

被引:12
|
作者
Shcherbin, K
Odoulov, S
Ramaz, F
Farid, B
Briat, B
von Bardeleben, HJ
Delaye, P
Roosen, G
机构
[1] Inst Phys, UA-03650 Kiev, Ukraine
[2] Ecole Super Phys & Chim Ind Ville Paris, Lab Opt Phys, F-75231 Paris 05, France
[3] Univ Paris 06, Phys Solides Grp, F-75231 Paris 05, France
[4] Univ Paris 07, Phys Solides Grp, F-75231 Paris 05, France
[5] Ctr Sci Orsay, Lab Charles Fabry, Inst Opt, F-91403 Orsay, France
关键词
photorefractive semiconductors; cadmium telluride; CdTe : Ge;
D O I
10.1016/S0925-3467(01)00154-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The charge transfer processes in photorefractive CdTe:Ge were modeled using the data of optical absorption, magnetic circular dichroism (MCD) and electron paramagnetic resonance (EPR) spectroscopies. Within the developed model the variations in the photorefractive properties of different CdTe:Ge samples are explained by differences in the relative concentrations of donor and trap centers. The existence of two different centers of comparable concentrations, each in two charge states, allows charge redistribution between them and gives rise to optical sensitization of some CdTe:Ge samples for photorefractive recording under an auxiliary illumination. In the present article we follow the proposal of pseudo-3D presentation of light-induced absorption to distinguish the main charge transfer processes at different excitation energies and explain the sensitization of CdTe:Ge for photorefractive recording at 1.06, 1.32 and 1.55 mum by light with appropriate wavelength. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:151 / 154
页数:4
相关论文
共 50 条
  • [21] Ultrafast charge carrier relaxation and charge transfer processes in CdS/CdTe thin films
    Pandit, Bill
    Dharmadasa, Ruvini
    Dharmadasa, I. M.
    Druffel, Thad
    Liu, Jinjun
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2015, 17 (26) : 16760 - 16766
  • [22] State of the art and prospects of photorefractive CdTe
    Marfaing, Y
    GROWTH, CHARACTERISATION AND APPLICATIONS OF BULK II-VIS, 1999, 78 : 707 - 717
  • [23] Terahertz wave generation and detection from a CdTe crystal characterized by different excitation wavelengths
    Xie, X
    Xu, JZ
    Zhang, XC
    OPTICS LETTERS, 2006, 31 (07) : 978 - 980
  • [24] Parameters of light-induced charge transfer processes in photorefractive crystals
    O. F. Schirmer
    C. Veber
    M. Meyer
    Physics of the Solid State, 2002, 44 : 1426 - 1432
  • [25] BEHAVIOR OF GE IN CDTE
    SHCHERBAK, LP
    NIKONYUK, ES
    PANCHUK, OE
    SAVITSKII, AV
    FEICHUK, PI
    MATLAK, VV
    INORGANIC MATERIALS, 1977, 13 (03) : 343 - 346
  • [26] Photosensitive centers in CdTe⟨Ge⟩, CdTe⟨Sn⟩, and CdTe⟨Pb⟩
    Gorlei, PN
    Parfenyuk, OA
    Ilashchuk, MI
    Ul'yanitskii, KS
    Burachek, VR
    Chupyra, SN
    INORGANIC MATERIALS, 2003, 39 (11) : 1127 - 1131
  • [27] Photosensitive Centers in CdTe〈Ge〉, CdTe〈Sn〉, and CdTe〈Pb〉
    P. N. Gorlei
    O. A. Parfenyuk
    M. I. Ilashchuk
    K. S. Ul'yanitskii
    V. R. Burachek
    S. N. Chupyra
    Inorganic Materials, 2003, 39 : 1127 - 1131
  • [28] NONEQUILIBRIUM CHARGE-TRANSFER AND LOW-TEMPERATURE PHOTOREFRACTIVE EFFECTS
    NOLTE, DD
    GLASS, AM
    OPTICAL AND QUANTUM ELECTRONICS, 1990, 22 : S47 - S60
  • [29] Parameters of light-induced charge transfer processes in photorefractive crystals
    Schirmer, OF
    Veber, C
    Meyer, M
    PHYSICS OF THE SOLID STATE, 2002, 44 (08) : 1426 - 1432
  • [30] Charge transfer and surface diffusion of lead on Ge(111)
    Seehofer, L
    Falkenbeng, G
    Johnson, RL
    SURFACE REVIEW AND LETTERS, 1998, 5 (01) : 111 - 117