Analytical model for the forward current of Al implanted 4H-SiC p-i-n diodes in a wide range of temperatures

被引：16
|
作者：
Pezzimenti, F. [1 ]
Albanese, L. Freda [2 ]
Bellone, S. [2 ]
Della Corte, F. G. [1 ]
机构：
[1] DIMET Mediterranea Univ Reggio Calabria, Via Graziella Feo di Vito, I-89100 Reggio Di Calabria, RC, Italy
[2] Univ Salerno, DIIIE, I-84084 Salerno, Italy
来源：
PROCEEDINGS OF THE 2009 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2009年
关键词：
Silicon carbide; power semiconductor diodes; semiconductor device modeling; current density; 3C; 4H;
D O I：
10.1109/BIPOL.2009.5314147
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The forward J-V characteristics of 4H-SiC p-i-n diodes are investigated in a wide range of currents and temperatures by means of an analytical model which describes in detail the role of the various physical parameters, such as bandgap narrowing effect, incomplete doping activation and doping-dependent mobility. In order to analyze the influence of the SiC properties at different injection regimes, the total diode current is expressed in terms of the minority current contributions in the various device regions. The accuracy of the model is verified by comparisons with numerical simulations and experimental data reported in the literature. The analysis shows that the proposed model can turn useful for a better understanding of the device behavior and for implementation in circuit simulators.
引用
收藏
页码：214 / +
页数：2
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