Low-Temperature Microwave Annealing Process for Dopant Activation and Thermal Stability of TiN Material

被引：0

作者：

Tsai, Bo-An ^{[1
]}

Lai, Chiung-Hui ^{[2
]}

Lee, Bo-Shiun ^{[2
]}

Luo, Chih-Wei ^{[1
]}

Lee, Yao-Jen ^{[3
,4
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

[2] Chung Hua Univ, Dept Elect Engn, Hsinchu 30012, Taiwan

[3] Natl Nano Device Labs, Hsinchu 30010, Taiwan

[4] Natl Chung Hsing Univ, Dept Phys, Taichung 402, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2012年 / 15卷 / 06期

关键词：

D O I：

10.1149/2.013206esl

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this study, using microwave annealing for dopant activation and thermal stability of the TiN gate electrode is investigated. Workfunction shift of TiN materials was suppressed due to the low temperature process. Implanted species, such as phosphorus, arsenic, and boron, can also be well-activated and diffusionless in Si after microwave annealing. Moreover, analysis of X-ray diffraction intensity can be used to explain the workfunction shift of the TiN materials. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.013206esl] All rights reserved.

引用

页码：H185 / H187

页数：3

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