Low-Temperature Microwave Annealing Process for Dopant Activation and Thermal Stability of TiN Material

被引：0

作者：

Tsai, Bo-An ^{[1
]}

Lai, Chiung-Hui ^{[2
]}

Lee, Bo-Shiun ^{[2
]}

Luo, Chih-Wei ^{[1
]}

Lee, Yao-Jen ^{[3
,4
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

[2] Chung Hua Univ, Dept Elect Engn, Hsinchu 30012, Taiwan

[3] Natl Nano Device Labs, Hsinchu 30010, Taiwan

[4] Natl Chung Hsing Univ, Dept Phys, Taichung 402, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2012年 / 15卷 / 06期

关键词：

D O I：

10.1149/2.013206esl

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this study, using microwave annealing for dopant activation and thermal stability of the TiN gate electrode is investigated. Workfunction shift of TiN materials was suppressed due to the low temperature process. Implanted species, such as phosphorus, arsenic, and boron, can also be well-activated and diffusionless in Si after microwave annealing. Moreover, analysis of X-ray diffraction intensity can be used to explain the workfunction shift of the TiN materials. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.013206esl] All rights reserved.

引用

页码：H185 / H187

页数：3

共 50 条

[31] Low-temperature dopant activation using nanosecond ultra-violet laser annealing for monolithic 3D integration
Kim, Jin-Hyun
Ji, Hyung-Min
Manh-Cuong Nguyen
An Hoang-Thuy Nguyen
Kim, Sang-Woo
Baek, Jong-Yeon
Kim, Jiyoung
Choi, Rino
THIN SOLID FILMS, 2021, 735
[32] Thermal stability of low-temperature alumina sorbents and catalysts
Andryushkova, OV
Kirichenko, OA
Ushakov, VA
ADSORPTION AND ITS APPLICATIONS IN INDUSTRY AND ENVIRONMENTAL PROTECTION, VOL I: APPLICATIONS IN INDUSTRY, 1999, 120 : 587 - 619
[33] Low-Temperature Fabrication of Amorphous Zinc-Tin-Oxide Thin Film Transistors with In-Situ Annealing Process
Kim, Sungmin
Kim, Ji Min
Heo, Jaeyeong
Kim, Hyeong Joon
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (10) : P728 - P732
[34] Low-Temperature Microwave Annealing Processes for Future IC Fabrication-A Review
Lee, Yao-Jen
Cho, Ta-Chun
Chuang, Shang-Shiun
Hsueh, Fu-Kuo
Lu, Yu-Lun
Sung, Po-Jung
Chen, Hsiu-Chih
Current, Michael I.
Tseng, Tseung-Yuen
Chao, Tien-Sheng
Hu, Chenming
Yang, Fu-Liang
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (03) : 651 - 665
[35] Low-temperature annealing system for 300mm thermal processing
Yoo, WS
Yamazaki, T
Uchino, T
SOLID STATE TECHNOLOGY, 2001, 44 (06) : 152 - +
[36] A LOW-TEMPERATURE BONDING PROCESS USING DEPOSITED GOLD TIN COMPOSITES
LEE, CC
WANG, CY
THIN SOLID FILMS, 1992, 208 (02) : 202 - 209
[37] Simultaneous Activation and Crystallization by Low-Temperature Microwave Annealing for Improved Quality of Amorphous Silicon Thin-Film Transistors
Lu, Yu-Lun
Lee, Yao-Jen
Chao, Tien-Sheng
ECS SOLID STATE LETTERS, 2012, 1 (01) : P1 - P3
[38] GRAIN-REFINEMENT BY LOW-TEMPERATURE ROLLING AND SUBSEQUENT ANNEALING PROCESS
UMAKOSHI, Y
YAMAGUCHI, M
TETSU TO HAGANE-JOURNAL OF THE IRON AND STEEL INSTITUTE OF JAPAN, 1993, 79 (05): : 75 - 81
[39] Low-temperature dopant activation and its application to polycrystalline silicon thin film transistors
Lee, SW
Ihn, TH
Joo, SK
APPLIED PHYSICS LETTERS, 1996, 69 (03) : 380 - 382
[40] LOW-TEMPERATURE THERMAL-EXPANSION OF BERYLLIUM AS AN OPTICAL MATERIAL
BROWDER, JS
BALLARD, SS
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1986, 3 (13): : P83 - P83

← 1 2 3 4 5 →