Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing

被引：23
|
作者：
Lee, Yao-Jen [1 ,2 ]
Chuang, Shang-Shiun [3 ,4 ]
Hsueh, Fu-Kuo [1 ,5 ]
Lin, Ho-Ming [1 ]
Wu, Shich-Chuang [1 ]
Wu, Ching-Yi [6 ]
Tseng, Tseung-Yuen [3 ,4 ]
机构：
[1] Natl Nano Device Labs, Hsinchu 30010, Taiwan
[2] Natl Chung Hsing Univ, Dept Phys, Taichung 402, Taiwan
[3] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[4] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
[5] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan
[6] Dayeh Univ, Dept Elect Engn, Changhua 51591, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 02期
关键词：
Germanium; low temperature; microwave anneal; phosphorus; rapid thermal anneal (RTA); BORON;
D O I：
10.1109/LED.2010.2090937
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Phosphorus activated in germanium epitaxy atop Si wafer by low-temperature microwave annealing technique was investigated in this letter. Compared to the conventional RTA process, the temperature of phosphorus activation could be 120 degrees C to 140 degrees C which is an improvement in temperature reduction at the same sheet resistance. According to the SRP, up to 150 degrees C reduction in maximum temperature at the same activation concentration (about 2 x 10(19) cm(-3)) could be achieved. Through adjusting the microwave power and process time, sheet resistance could be decreased while suppressing dopant diffusion. In addition, the inserted susceptor wafers above and below the processing wafer also suppressed the dopant diffusion and improved film roughness.
引用
收藏
页码：194 / 196
页数：3
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