OHMIC CONTACTS FORMED ON SINGLE-CRYSTALLINE AND POLYCRYSTALLINE SILICON USING ION-IMPLANTATION AND LOW-TEMPERATURE ANNEALING

被引：2
|
作者：
HARRISON, HB [1 ]
REEVES, GK [1 ]
机构：
[1] TELECOM RES LABS, CLAYTON, VIC, AUSTRALIA
来源：
IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 02期
关键词：
D O I：
10.1109/EDL.1984.25830
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：53 / 56
页数：4
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