A rapid evaluation method for degradation activation energy of n-GaAs ohmic contacts with and without TiN diffusion barrier layers

被引：1

作者：

Zhang, WR ^{[1
]}

Li, ZG ^{[1
]}

Mu, FC ^{[1
]}

Wang, LX ^{[1
]}

Sun, YH ^{[1
]}

Cheng, YH ^{[1
]}

Chen, JX ^{[1
]}

机构：

[1] Beijing Polytech Univ, Dept Elect Engn, Beijing 100022, Peoples R China

来源：

PROCEEDINGS OF THE 2001 8TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | 2001年

关键词：

D O I：

10.1109/IPFA.2001.941471

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A rapid evaluation method, temperature ramp method, for GaAs MESFETs ohmic contacts is proposed. By use of this method, activation energy for ohmic contacts degradation can be obtained using less time and a small number of samples than traditional method, and the results are in agreement with those obtained by traditional methods. In accordance with some drawbacks of traditional AuGeNi/Au ohmic contacts, a new ohmic contacts system with TiN diffusion barrier layer is proposed. Experiments results show that the reliability of ohmic contacts with TiN is greatly superior to that of traditional AuGeNi/Au ohmic contacts.

引用

页码：134 / 137

页数：4

共 31 条

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