Hydrogen penetration into Si under wet chemical etching: Experiment and simulation

被引：5

作者：

Feklisova, OV ^{[1
]}

Yakimov, EB ^{[1
]}

Yarykin, NA ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Microelect Technol, RU-142432 Chernogolovka, Moscow Dist, Russia

来源：

POLYCRYSTALLINE SEMICONDUCTORS IV MATERIALS, TECHNOLOGIES AND LARGE AREA ELECTRONICS | 2001年 / 80-81卷

关键词：

diffusion; hydrogen; silicon; wet chemical etching;

D O I：

10.4028/www.scientific.net/SSP.80-81.121

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Systematic study of hydrogen penetration into Czochralski, float-zone, and polycrystalline silicon wafers under wet chemical etching in acid solutions is reported. Hydrogen depth profiles are experimentally determined via electrically active boron or phosphorus distributions. Similar profiles are calculated taking into account the effect of different types of traps on hydrogen diffusion both during etching and subsequent relaxation. A good correlation between the measured and simulated profiles is revealed. A capture of hydrogen by oxygen related centers in Cz Si is demonstrated.

引用

页码：121 / 126

页数：6

共 50 条

[41] Optical in situ monitoring of wet chemical etching
Slovak Univ of Technology, Bratislava, Slovakia
Surf Interface Anal, 1 (56-61):
[42] HYDROGEN ON SI - UBIQUITOUS SURFACE TERMINATION AFTER WET-CHEMICAL PROCESSING
PIETSCH, GJ
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1995, 60 (04): : 347 - 363
[43] Eliminating backgrind defects with wet chemical etching
McHatton, C
Gumbert, CM
SOLID STATE TECHNOLOGY, 1998, 41 (11) : 85 - +
[44] Wet Chemical and Plasma Etching of Photosensitive Glass
Brokmann, Ulrike
Weigel, Christoph
Altendorf, Luisa-Marie
Strehle, Steffen
Raedlein, Edda
SOLIDS, 2023, 4 (03): : 213 - 234
[45] Wet chemical etching of AlN single crystals
Zhuang, D
Edgar, JH
Liu, LH
Liu, B
Walker, L
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2002, 7 (04):
[46] Wet chemical etching of AIN in KOH solution
Cimalla, I.
Foerster, Ch.
Cimalla, V.
Lebedev, V.
Cengher, D.
Ambacher, O.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 1767 - 1770
[47] A Study on the Removal Method of Si Residue during Si Wet Etching
Ko, Kihyung
Jeon, Hayoung
Song, Myunggeun
Han, Jeongnam
Yoon, Boun
Choi, Siyoung
Kang, Hokyu
Lee, Chilgi
Kim, Taesung
SEMICONDUCTOR CLEANING SCIENCE AND TECHNOLOGY 13 (SCST 13), 2013, 58 (06): : 57 - 61
[48] Texturing of multicrystalline silicon with acidic wet chemical etching and plasma etching
Schultz, O
Emanuel, G
Glunz, SW
Willeke, GP
PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 1360 - 1363
[49] CHEMICAL ETCHING OF VICINAL SI(111) - DEPENDENCE OF THE SURFACE-STRUCTURE AND THE HYDROGEN TERMINATION ON THE PH OF THE ETCHING SOLUTIONS
JAKOB, P
CHABAL, YJ
JOURNAL OF CHEMICAL PHYSICS, 1991, 95 (04): : 2897 - 2909
[50] Analysis of Si Wet Etching Effect on Wafer Edge
Saito, Suguru
Okuyama, Atsushi
Takeo, Kenji
Hagimoto, Yoshiya
Iwamoto, Hayato
ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES XIII, 2016, 255 : 97 - 101

← 1 2 3 4 5 →