Hydrogen penetration into Si under wet chemical etching: Experiment and simulation

被引：5
|
作者：
Feklisova, OV [1 ]
Yakimov, EB [1 ]
Yarykin, NA [1 ]
机构：
[1] Russian Acad Sci, Inst Microelect Technol, RU-142432 Chernogolovka, Moscow Dist, Russia
来源：
POLYCRYSTALLINE SEMICONDUCTORS IV MATERIALS, TECHNOLOGIES AND LARGE AREA ELECTRONICS | 2001年 / 80-81卷
关键词：
diffusion; hydrogen; silicon; wet chemical etching;
D O I：
10.4028/www.scientific.net/SSP.80-81.121
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Systematic study of hydrogen penetration into Czochralski, float-zone, and polycrystalline silicon wafers under wet chemical etching in acid solutions is reported. Hydrogen depth profiles are experimentally determined via electrically active boron or phosphorus distributions. Similar profiles are calculated taking into account the effect of different types of traps on hydrogen diffusion both during etching and subsequent relaxation. A good correlation between the measured and simulated profiles is revealed. A capture of hydrogen by oxygen related centers in Cz Si is demonstrated.
引用
收藏
页码：121 / 126
页数：6
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