Structural analysis of diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature

被引：1
|
作者：
Ohno, Yutaka [1 ]
Liang, Jianbo [2 ]
Yoshida, Hideto [3 ]
Shimizu, Yasuo [4 ,5 ]
Nagai, Yasuyoshi [4 ]
Shigekawa, Naoteru [2 ]
机构：
[1] Tohoku Univ, Inst Mat Res IMR, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan
[2] Osaka City Univ, Grad Sch Engn, 3-3-138 Sugimoto, Sumiyoshi, Osaka 5588585, Japan
[3] Osaka Univ, SANKEN Inst Sci & Ind Res, 8-1 Mihogaoka, Ibaraki, Osaka 5670047, Japan
[4] Tohoku Univ, Inst Mat Res IMR, 2145-2 Narita Cho, Oarai, Ibaraki 3111313, Japan
[5] Natl Inst Mat Sci, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan
来源：
2021 7TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) | 2021年
关键词：
D O I：
10.1109/LTB-3D53950.2021.9598382
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature, art amorphous layer with carbon and silicon is formed in the bonding process, via atomic intermixing across the interfaces. The layer is crystallized by 1000 degrees C annealing, forming a SiC compound.
引用
收藏
页码：12 / 12
页数：1
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