Temperature and pressure dependence of the recombination processes in 1.5 μm InAs/InP (311)B quantum dot lasers

被引：18
|
作者：
Masse, N. F.
Homeyer, E.
Marko, I. P.
Adams, A. R.
Sweeney, S. J. [1 ]
Dehaese, O.
Piron, R.
Grillot, F.
Loualiche, S.
机构：
[1] Univ Surrey, Adv Inst Technol, Guildford GU2 7XH, Surrey, England
[2] INSA Rennes, UMR FOTON LENS 6082, F-35403 Rennes, France
[3] Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England
[4] INSA Rennes, UMR FOTON LENS 6082, F-35403 Rennes, France
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 13期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1063/1.2790777
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The threshold current and its radiative component in 1.5 mu m InAs/InP (311)B quantum dot lasers are measured as a function of the temperature. Despite an almost temperature insensitive radiative current, the threshold current increases steeply with temperature leading to a characteristic temperature T-0 approximate to 55 K around 290 K. Direct observation of spontaneous emission from the wetting layer shows that some leakage from the dots to the wetting layer occurs in these devices. However, a decrease in the threshold current as a function of pressure is also measured suggesting that Auger recombination dominates the nonradiative current and temperature sensitivity of these devices. (C) 2007 American Institute of Physics.
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页数：3
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