InAs/InP based quantum dot mode-locked semiconductor lasers at 1.5 μm

被引：0

作者：

Duan, Guang-Hua ^{[1
]}

Lelarge, F. ^{[1
]}

Dagens, B. ^{[1
]}

Brenot, R. ^{[1
]}

Accard, A. ^{[1
]}

Shen, A. ^{[1
]}

van Dijk, F. ^{[1
]}

Make, D. ^{[1
]}

Le Gouezigou, O. ^{[1
]}

Le Gouezigou, L. ^{[1
]}

Provost, J. -G. ^{[1
]}

Poingt, F. ^{[1
]}

Landreau, J. ^{[1
]}

Drisse, O. ^{[1
]}

Derouin, E. ^{[1
]}

Rousseau, B. ^{[1
]}

Pommereau, F. ^{[1
]}

机构：

[1] Alcatel Thales 3V Lab, F-91767 Palaiseau, France

来源：

OPTOELECTRONIC MATERIALS AND DEVICES II | 2007年 / 6782卷

关键词：

quantum dots; semiconductor lasers; semiconductor optical amplifiers; mode-locked laser; clock recovery;

D O I：

10.1117/12.754399

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This paper summarizes recent advances on InAs/InP mode-locked quantum dashes (QD) lasers, and their applications for all-optical clock recovery, short pulse generation and millimeter wave generation. We demonstrate that QD FP lasers, owing to the small confinement factor and the 3D quantification of electronic energy levels, exhibit a beating linewidth as narrow as 15 kHz. Such an extremely narrow linewidth, compared to their QW or bulk counterparts, leads to the excellent phase noise and time jitter characteristics when QD lasers are actively mode-locked. We report also on an actively mode-locking tunnel injection quantum dash Fabry-Perot laser diode at 42.7GHz, generating nearly Fourier transform limited pulses with a pulse width of 2ps over 16nm.

引用

页码：V7821 / V7821

页数：6

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