InAs/InP quantum dot VECSEL emitting at 1.5 μm

被引：9
|
作者：
Nechay, K. [1 ]
Mereuta, A. [2 ]
Paranthoen, C. [3 ]
Brevalle, G. [3 ]
Levallois, C. [3 ]
Alouini, M. [3 ]
Chevalier, N. [3 ]
Perrin, M. [3 ]
Suruceanu, G. [4 ]
Caliman, A. [4 ]
Guina, M. [1 ]
Kapon, E. [2 ]
机构：
[1] Tampere Univ, Optoelect Res Ctr, Phys Unit, Tampere 33720, Finland
[2] Ecole Polytech Fed Lausanne, Lab Phys Nanostruct, Inst Phys, CH-1015 Lausanne, Switzerland
[3] Univ Rennes, Inst FOTON UMR 6082, CNRS, F-35000 Rennes, France
[4] LakeDiamond SA, Rue Galilee 7, CH-1400 Yverdon, Switzerland
来源：
APPLIED PHYSICS LETTERS | 2019年 / 115卷 / 17期
基金：
美国国家科学基金会;
关键词：
SEMICONDUCTOR DISK LASERS; DIRECT EMISSION; HIGH-POWER; NM;
D O I：
10.1063/1.5125632
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 mu m is reported. The active region employs 20 layers of high-density Stranski-Krastanow InAs quantum dots on an InP substrate. The QD density and emission wavelength were independently adjusted by employing a double-cap growth sequence. Optimization of the spacer layer thickness and strain compensation rendered possible nucleation of a relatively high number of QD layers per antinode of the electromagnetic standing wave, which in turn enabled a high output power continuous wave operation of about 2.2 W. The operation wavelength could be tuned over 60 nm, taking advantage of the broadband gain characteristic of QD media. Published under license by AIP Publishing.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] 1.5 μm InAs/InGaAsP/InP quantum dot laser with improved temperature stability
    Zubov, F. I.
    Gladii, S. P.
    Shernyakov, Yu M.
    Maximov, M. V.
    Semenova, E. S.
    Kulkova, I. V.
    Yvind, K.
    Zhukov, A. E.
    3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016), 2016, 741
  • [2] Linewidth enhancement factor of InAs/InP quantum dot lasers around 1.5 μm
    Jiao, Z. J.
    Lu, Z. G.
    Liu, J. R.
    Poole, P. J.
    Barrios, P. J.
    Poitras, D.
    Pakulski, G.
    Caballero, J.
    Zhang, X. P.
    OPTICS COMMUNICATIONS, 2012, 285 (21-22) : 4372 - 4375
  • [3] InAs/InGaAsP QUANTUM DOT STRUCTURES GROWN ON InP SUBSTRATE EMITTING AT 1.55μm
    Mialichi, J. R.
    Frateschi, N. C.
    11TH INTERNATIONAL CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS11), 2010, 210
  • [4] Modelocked and Tunable InAs/InP (100) Quantum Dot Lasers in the 1.5 μm to 1.8 μm Region
    Bente, Erwin
    Tahvili, Saeed
    Tilma, Bauke
    Kotani, Junji
    Smit, Meint
    Noetzel, Richard
    2010 12TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON), 2011,
  • [5] InAs/InP based quantum dot mode-locked semiconductor lasers at 1.5 μm
    Duan, Guang-Hua
    Lelarge, F.
    Dagens, B.
    Brenot, R.
    Accard, A.
    Shen, A.
    van Dijk, F.
    Make, D.
    Le Gouezigou, O.
    Le Gouezigou, L.
    Provost, J. -G.
    Poingt, F.
    Landreau, J.
    Drisse, O.
    Derouin, E.
    Rousseau, B.
    Pommereau, F.
    OPTOELECTRONIC MATERIALS AND DEVICES II, 2007, 6782 : V7821 - V7821
  • [6] Fabrication and characterization of InAs quantum dot semiconductor optical amplifiers on InP operating at 1.5 μm
    Kim, Namje
    Oh, Jung Mi
    Lee, Donghan
    Pyun, Suhyun
    Ko, Deokgil
    Yoon, Juhyung
    Jeong, Weonguk
    Jang, Jongwon
    QUANTUM DOTS, PARTICLES, AND NANOCLUSTERS IV, 2007, 6481
  • [7] Decoherence of single photons from an InAs/InP quantum dot emitting at a 1.3 μm wavelength
    Kuroda, Takashi
    Sakuma, Yoshiki
    Sakoda, Kazuaki
    Takemoto, Kazuya
    Usuki, Tatsuya
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 4, 2009, 6 (04): : 944 - +
  • [8] Dynamic properties of InAs/InP (311)B Quantum Dot lasers emitting at 1.52 μm
    Martinez, A.
    Merghem, K.
    Provost, J. -G.
    Bouchoule, S.
    Martin, F.
    Moreau, G.
    Grillot, F.
    Piron, R.
    Dehaese, O.
    Tavernier, K.
    Loualiche, S.
    Ramdane, A.
    2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, 2008, : 37 - +
  • [9] Characteristics of In(Ga)As quantum dot lasers on InP emitting at 1.5 μm in continuous wave mode
    Kim, N. J.
    Yim, J. S.
    Lee, D.
    Jeong, W. G.
    Pyun, S. H.
    Jang, J. W.
    QUANTUM DOTS, PARTICLES, AND NANOCLUSTERS III, 2006, 6129
  • [10] Microphotoluminescence of exciton and biexciton around 1.5 μm from a single InAs/InP(001) quantum dot
    Saint-Girons, G
    Chauvin, N
    Michon, A
    Patriarche, G
    Beaudoin, G
    Brémond, G
    Bru-Chevallier, C
    Sagnes, I
    APPLIED PHYSICS LETTERS, 2006, 88 (13)
12345