InAs/InP quantum dot VECSEL emitting at 1.5 μm

被引：9

作者：

Nechay, K. ^{[1
]}

Mereuta, A. ^{[2
]}

Paranthoen, C. ^{[3
]}

Brevalle, G. ^{[3
]}

Levallois, C. ^{[3
]}

Alouini, M. ^{[3
]}

Chevalier, N. ^{[3
]}

Perrin, M. ^{[3
]}

Suruceanu, G. ^{[4
]}

Caliman, A. ^{[4
]}

Guina, M. ^{[1
]}

Kapon, E. ^{[2
]}

机构：

[1] Tampere Univ, Optoelect Res Ctr, Phys Unit, Tampere 33720, Finland

[2] Ecole Polytech Fed Lausanne, Lab Phys Nanostruct, Inst Phys, CH-1015 Lausanne, Switzerland

[3] Univ Rennes, Inst FOTON UMR 6082, CNRS, F-35000 Rennes, France

[4] LakeDiamond SA, Rue Galilee 7, CH-1400 Yverdon, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2019年 / 115卷 / 17期

基金：

美国国家科学基金会;

关键词：

SEMICONDUCTOR DISK LASERS; DIRECT EMISSION; HIGH-POWER; NM;

D O I：

10.1063/1.5125632

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 mu m is reported. The active region employs 20 layers of high-density Stranski-Krastanow InAs quantum dots on an InP substrate. The QD density and emission wavelength were independently adjusted by employing a double-cap growth sequence. Optimization of the spacer layer thickness and strain compensation rendered possible nucleation of a relatively high number of QD layers per antinode of the electromagnetic standing wave, which in turn enabled a high output power continuous wave operation of about 2.2 W. The operation wavelength could be tuned over 60 nm, taking advantage of the broadband gain characteristic of QD media. Published under license by AIP Publishing.

引用

页数：4

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